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RUQ050N02
Transistors
1.5V Drive Nch MOSFET
RUQ050N02
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TSMT6
Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) 1.5V drive
Applications Switching
Each lead has same dimensions Abbreviated symbol : XG
Packaging specifications
Package Type RUQ050N02 Code Basic ordering unit (pieces) Taping TR 3000
Inner circuit
(6) (5) (4)
2
1
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain
(1)
(2)
(3)
1 ESD PROTECTION DIODE 2 BODY DIODE
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits 20 10 5.0 10 1.0 10 1.25 150 -55 to +150
Unit V V A A A A W C C
Thermal resistance
Parameter Channel to ambient
Mounted on a ceramic board
Symbol Rth(ch-a)
Limits 100
Unit C/W
1/4
RUQ050N02
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Min. - 20 - 0.3 - - - - 6.5 - - - - - - - - - -
Typ. - - - - 22 27 32 40 - 900 190 120 15 25 70 100 12 2.5 1.7
Max. 10 - 1 1.3 30 38 45 80 - - - - - - - - - - -
Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 5.0A, VGS= 4.5V ID= 5.0A, VGS= 2.5V ID= 2.5A, VGS= 1.8V ID= 1.0A, VGS= 1.5V VDS= 10V, ID= 5.0A VDS= 10V VGS=0V f=1MHz VDD 10V ID= 2.5A VGS= 4.5V RL 4 RG=10 VDD 10V, ID= 5.0A VGS= 4.5V RL 2, RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS= 1.0A, VGS=0V
2/4
RUQ050N02
Transistors
Electrical characteristics curves
10000
tf
1000
Ciss
100
td (off)
GATE-SOURCE VOLTAGE : VGS (V)
Ta=25C f=1MHz VGS=0V
1000
6
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta=25C VDD=10V ID=5A 5 RG=10 Pulsed 4 3
Coss
td (on)
100
Crss
10
tr
2 1 0 0 2 4 6 8 10 12 14 16
10 0.01
0.1
1
10
100
1 0.01
0.1
1
Ta=25C VDD=10V VGS=4.5V RG=10 Pulsed 10
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
VDS=10V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10
60 ID=5.0A ID=2.5A 40 Ta=25C Pulsed
10
Ta=125C Ta=75C Ta=25C Ta=-25C
VGS=0V Pulsed
1
SOURCE CURRENT : IS (A)
5 6 7 8 9 10
DRAIN CURRENT : ID (A)
Ta=125C Ta=75C Ta=25C Ta=-25C
1
0.1
20
0.1
0.01
0.001 0.2
0 0 1 2 3 4
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Source Current vs. Source-Drain Voltage
1000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VGS=4.5V Pulsed
1000
VGS=2.5V Pulsed
1000
VGS=1.8V Pulsed
100
Ta=125C Ta=75C Ta=25C Ta=-25C
100
Ta=125C Ta=75C Ta=25C Ta=-25C
100
Ta=125C Ta=75C Ta=25C Ta=-25C
10 0.01
0.1
1
10
10 0.01
0.1
1
10
10 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source On-State Resistance vs. Drain current ()
Fig.8 Static Drain-Source On-State Resistance vs. Drain current ()
Fig.9 Static Drain-Source On-State Resistance vs. Drain current ()
3/4
RUQ050N02
Transistors
1000
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
FORWARD TRANSFER ADMITTANCE : Yfs (S)
VGS=1.5V Pulsed
1000
Ta=25C Pulsed
100
VDS=10V Pulsed
Ta=-25C Ta=25C Ta=75C Ta=125C
100
Ta=125C Ta=75C Ta=25C Ta=-25C
10
100
VGS=1.5V VGS=1.8V VGS=2.5V VGS=4.5V
1
10 0.01
0.1
1
10
10 0.01
0.1
1
10
0.1 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.10 Static Drain-Source On-State Resistance vs. Drain current ( )
Fig.11 Static Drain-Source On-State Resistance vs. Drain current ( )
Fig.12 Forward Transfer Admittance vs. Drain current
Measurement circuit
Pulse Width
VGS ID RL D.U.T. RG VDD VDS
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.13 Switching Time Measurement Circuit
Fig.14 Switching Waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG(Const.) D.U.T. RG VDD
Qgd
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0

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